GA600GD25S |
RFQ for GA600GD25S Required Field |
 |
| Product | Manufacturers | Pack | D/C |
| GA600GD25S | - | MODULE | - |
Typical Application |
Features |
| • Increased operating efficiency• Direct mounting to heatsink• Performance optimized for power conversion: UPS,SMPS, Welding• Lower EMI, requires less snubbing | • Standard speed, optimized for battery poweredapplication• Very low conduction losses• HEXFREDTMantiparallel diodes with ultra-softrecovery• Industry standard package• UL recognition pending• Internal thermistor |
| Parameter | Max. | Units | |
| VCES | Collector-to-Emitter Breakdown Voltage | 250 | V |
| IC @ TC=25°C | Continuous Collector Current | 600 | A |
| ICM | Pulsed Collector Current | 1200 | |
| ILM | Peak Switching Current | 1200 | |
| IFM | Peak Diode Forward Current | 1200 | |
| VGE | Gate-to-Emitter Voltage | ± 17 | V |
| VISOL | RMS Isolation Voltage, Any Terminal to Case, t=1 min | 2500 | |
| PD @ TC=25°C | Maximum Power Dissipation | 1920 | W |
| PD @ TC=85°C | Maximum Power Dissipation |
1000 | |
| TJ | Operating Junction | -40 to + 150 | °C |
| TSTG | Storage Temperature Range | -40 to + 125 |
